ZXMD65P02N8TA
Home
Category
FET, MOSFET
ZXMD65P02N8TA
The pictures are for reference only
like

ZXMD65P02N8TA

Brand:Diodes
Model:ZXMD65P02N8TA
stock:21149
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status stop production
working temperature -
Encapsulation/Housing 8-SOIC(0.154,3.90mm wide)
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 1.75W
FET Type 2 P Channel(two)
Drain source voltage (Vdss) 20V
Current at 25 ° C - continuous drain (Id) 4A
On resistance (maximum) for different Ids and Vgs 50 mΩ @ 2.9A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA(min)
Gate charge (Qg) at different Vgs (maximum) 20nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 960pF @ 15V
FET function standard
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer